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Retrieve specific bibliographic entries from alphabetical sections of academic reference lists, particularly for physics and materials science literature organized by author surname
Codex または Claude でインストール この Prompt をコピーして Codex、Claude、または他のアシスタントに貼り付けると、Skill ページを確認してインストールできます。
SOC 職業分類に基づく
| name | bibliography-author-range-retrieval |
| description | Retrieve specific bibliographic entries from alphabetical sections of academic reference lists, particularly for physics and materials science literature organized by author surname |
Use this skill when looking up specific citations by author name range in organized bibliographies or reference sections.
Identify the alphabetical range of interest:
Access the bibliography or references section of the source document.
Find the section corresponding to the author name range.
For each entry, retrieve the following elements:
Multiple Works by Same Author: Use year suffix (2000a, 2000b) to distinguish Thesis References: Include institution and year Truncated Entries: Note incomplete information Collaborative Works: Extract all contributing authors
Present retrieved entries with:
Calculate electron transmission probability through planar barriers in 3D crystals by applying momentum conservation principles. Use when analyzing tunneling in three-dimensional lattices, when perpendicular momentum conservation must be accounted for, or when converting 1D tunneling results to 3D scenarios involving crystal structures.
Tune the optical band gap of hydrogenated amorphous silicon (a-Si:H) through alloying with germanium, carbon, oxygen, or nitrogen. Use this skill when designing solar cell layers that require specific band gap values, such as high-bandgap p-layers or optimized absorption i-layers, or when adjusting the spectral response of a-Si:H-based photovoltaic devices.
Format academic citations for journal articles, books, conference proceedings, and other scientific references according to standard bibliographic conventions used in physics and materials science literature
Calculate electron mobility limited by acoustic phonon scattering in direct bandgap semiconductors and determine directional elastic constants. Use when analyzing temperature-dependent mobility, phonon scattering effects, or elastic properties in specific crystallographic directions.
Select and execute high-rate deposition techniques (VHF-PECVD, HWCVD, MW-CVD) for nanocrystalline silicon growth when standard RF-PECVD rates are insufficient or improved material properties are required. Use when deposition rates >10 Å/s are needed, when reducing hydrogen content is critical, or when improving stability against light-induced degradation is a priority.
Configure and apply advanced transport model features including quasi-Fermi level input handling and steric effects in ion transport. Use when modeling high ion vacancy densities, enabling non-Boltzmann statistics, or setting flexible doping parameters for transport layers.
