| name | ebl-process-controller |
| description | Electron Beam Lithography skill for high-resolution nanopatterning with dose optimization and proximity effect correction |
| allowed-tools | ["Read","Write","Glob","Grep","Bash"] |
| metadata | {"specialization":"nanotechnology","domain":"science","category":"fabrication","priority":"high","phase":6,"tools-libraries":["BEAMER","GenISys TRACER","Raith NanoSuite"]} |
| graph | {"domains":["domain:nanotechnology"],"skillAreas":["skill-area:mathematical-reasoning","skill-area:physics-simulation","skill-area:data-analysis"],"workflows":["workflow:experiment-design"],"roles":["role:research-engineer"]} |
EBL Process Controller
Purpose
The EBL Process Controller skill provides comprehensive electron beam lithography process control, enabling high-resolution nanopatterning through dose optimization, proximity effect correction, and critical dimension control.
Capabilities
- Pattern design and fracturing
- Dose optimization and modulation
- Proximity effect correction (PEC)
- Alignment and overlay control
- Resist processing optimization
- Critical dimension (CD) control
Usage Guidelines
EBL Process Control
-
Pattern Preparation
- Design in CAD software
- Fracture into write fields
- Apply beam step size
-
Dose Optimization
- Run dose matrices
- Apply PEC algorithms
- Account for pattern density
-
Process Integration
- Optimize resist thickness
- Control development conditions
- Verify feature dimensions
Process Integration
- Nanolithography Process Development
- Nanodevice Integration Process Flow
Input Schema
{
"pattern_file": "string",
"resist": "string",
"thickness": "number (nm)",
"target_cd": "number (nm)",
"beam_voltage": "number (kV)",
"beam_current": "number (pA)"
}
Output Schema
{
"optimized_dose": "number (uC/cm2)",
"pec_parameters": {
"alpha": "number",
"beta": "number",
"eta": "number"
},
"write_time": "number (hours)",
"expected_cd": "number (nm)",
"cd_uniformity": "number (3sigma)"
}