ebl-process-controller

name	ebl-process-controller
description	Electron Beam Lithography skill for high-resolution nanopatterning with dose optimization and proximity effect correction
allowed-tools	["Read","Write","Glob","Grep","Bash"]
metadata	{"specialization":"nanotechnology","domain":"science","category":"fabrication","priority":"high","phase":6,"tools-libraries":["BEAMER","GenISys TRACER","Raith NanoSuite"]}

EBL Process Controller

Purpose

The EBL Process Controller skill provides comprehensive electron beam lithography process control, enabling high-resolution nanopatterning through dose optimization, proximity effect correction, and critical dimension control.

Capabilities

• Pattern design and fracturing
• Dose optimization and modulation
• Proximity effect correction (PEC)
• Alignment and overlay control
• Resist processing optimization
• Critical dimension (CD) control

Usage Guidelines

EBL Process Control

1. Pattern Preparation

   • Design in CAD software
   • Fracture into write fields
   • Apply beam step size

2. Dose Optimization

   • Run dose matrices
   • Apply PEC algorithms
   • Account for pattern density

3. Process Integration

   • Optimize resist thickness
   • Control development conditions
   • Verify feature dimensions

Process Integration

• Nanolithography Process Development
• Nanodevice Integration Process Flow

Input Schema

{
  "pattern_file": "string",
  "resist": "string",
  "thickness": "number (nm)",
  "target_cd": "number (nm)",
  "beam_voltage": "number (kV)",
  "beam_current": "number (pA)"
}

Output Schema

{
  "optimized_dose": "number (uC/cm2)",
  "pec_parameters": {
    "alpha": "number",
    "beta": "number",
    "eta": "number"
  },
  "write_time": "number (hours)",
  "expected_cd": "number (nm)",
  "cd_uniformity": "number (3sigma)"
}